Electron mobility in selectively Si-doped GaAs/N–Al0.3Ga0.7As quantum well heterostructures with super-flat interfaces grown on (411)A GaAs substrates by molecular beam epitaxy

✍ Scribed by Satoshi Shimomura; Keisuke Shinohara; Kenji Kasahara; Satoshi Hiyamizu

• Book ID: 114155889
• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 124 KB
• Volume: 43-44
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(98)00166-x