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Light-induced mobility enhancement in delta-doped GaAs/In[sub 0.26]Ga[sub 0.74]As/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001)

✍ Scribed by Zervos, M.; Elliott, M.; Westwood, D. I.


Book ID
119953906
Publisher
American Institute of Physics
Year
1999
Tongue
English
Weight
376 KB
Volume
74
Category
Article
ISSN
0003-6951

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Photoluminescence from strained GaAs/In0
✍ S.F. Yoon; H.M. Li; K. Radhakrishnan; D.H. Zhang πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 263 KB

Low-temperature photoluminescence measurements were carried out to assess the changes in the properties of strained GaAs/InGaAs/GaAs multi-quantum-wells grown by molecular beam epitaxy at different substrate (well) temperatures with and without growth interruption at the heterointerfaces. Sharp exci