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Mobility enhancement by reduced remote impurity scattering in a pseudomorphic In[sub 0.7]Ga[sub 0.3]As/In[sub 0.52]Al[sub 0.48]As quantum well high electron mobility transistor structure with (411)A super-flat interfaces grown by molecular-beam epitaxy

✍ Scribed by Watanabe, I.; Kanzaki, K.; Aoki, T.; Kitada, T.; Shimomura, S.; Hiyamizu, S.

Book ID: 127111811
Publisher: AVS (American Vacuum Society)
Year: 2001
Tongue: English
Weight: 367 KB
Volume: 19
Category: Article
ISSN: 0734-211X
DOI: 10.1116/1.1387454

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