Extremely high electron mobility in Si/GexSi1-x structures grown by molecular beam epitaxy

✍ Scribed by Mii, Y. J.; Xie, Y. H.; Fitzgerald, E. A.; Monroe, Don; Thiel, F. A.; Weir, B. E.; Feldman, L. C.

• Book ID: 118005867
• Publisher: American Institute of Physics
• Year: 1991
• Tongue: English
• Weight: 651 KB
• Volume: 59
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.106246