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Very high electron mobility In0.8Ga0.2As heterostructure grown by molecular beam epitaxy

✍ Scribed by Munecazu Tacano; Yoshinobu Sugiyama; Yukihiro Takeuchi; Yoshiki Ueno

Book ID: 112975543
Publisher: Springer US
Year: 1991
Tongue: English
Weight: 394 KB
Volume: 20
Category: Article
ISSN: 0361-5235
DOI: 10.1007/bf03030211

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