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Study of the component distribution in Si/GexSi1−x/Si heterostructures grown by molecular beam epitaxy

✍ Scribed by V. G. Kesler; L. M. Logvinskii; V. I. Mashanov; O. P. Pchelyakov; V. V. Ul’yanov

Book ID
110129990
Publisher
SP MAIK Nauka/Interperiodica
Year
2002
Tongue
English
Weight
72 KB
Volume
44
Category
Article
ISSN
1063-7834

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Two dimensional electron gases in SiGe/S
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✍ J. M. Fernández; A. Matsumura; X. M. Zhang; M. H. Xie; L. Hart; J. Zhang; B. A. 📂 Article 📅 1995 🏛 Springer US 🌐 English ⚖ 799 KB

We have realized two dimensional electron gases (2DEGs) in tensile strained silicon (Si) channels between strain relaxed silicon germanium (Si0.70Ge0.3o) barriers grown on Si(100) substrates by Gas Source Molecular Beam Epitaxy (GSMBE). Disilane (Si2Hs), germane (GeH4), and arsine (AsHa) are used as