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Highly flat GexSi1−x/Si heterointerfaces grown by molecular beam epitaxy in two-dimensional growth mode

✍ Scribed by X Wei; GL Zhou; TC Zhou; C Sheng; MR Yu; Xun Wang


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
361 KB
Volume
43
Category
Article
ISSN
0042-207X

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Two dimensional electron gases in SiGe/S
✍ J. M. Fernández; A. Matsumura; X. M. Zhang; M. H. Xie; L. Hart; J. Zhang; B. A. 📂 Article 📅 1995 🏛 Springer US 🌐 English ⚖ 799 KB

We have realized two dimensional electron gases (2DEGs) in tensile strained silicon (Si) channels between strain relaxed silicon germanium (Si0.70Ge0.3o) barriers grown on Si(100) substrates by Gas Source Molecular Beam Epitaxy (GSMBE). Disilane (Si2Hs), germane (GeH4), and arsine (AsHa) are used as