✦ LIBER ✦

Extraction of gate dependent source/drain resistance and effective channel length in MOS devices at 77 K

✍ Scribed by Hwang, C.Y.; Tsung-Chia Kuo; Woo, J.C.S.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Determination of gate-bias dependent sou

✍ C.S. Ho; Y.C. Lo; Y.H. Chang; Juin J. Liou 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 233 KB

Accurate Extraction of Effective Channel

✍ Junsoo Kim; Jaehong Lee; Ickhyun Song; Yeonam Yun; Jong Duk Lee; Byung-Gook Park 📂 Article 📅 2008 🏛 IEEE 🌐 English ⚖ 583 KB

Gate-voltage dependence of source and dr

✍ Byun, Y.H.; Shur, M.S.; Peczalski, A.; Schuermeyer, F.L. 📂 Article 📅 1988 🏛 IEEE 🌐 English ⚖ 496 KB

At bias extraction of parasitic source a

✍ D. W. DiSanto; C. R. Bolognesi 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 219 KB

Gate-voltage dependence of source and dr

📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 104 KB