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Determination of gate-bias dependent source/drain series resistance and effective channel length for advanced MOS devices

✍ Scribed by C.S. Ho; Y.C. Lo; Y.H. Chang; Juin J. Liou

Book ID: 108271535
Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 233 KB
Volume: 50
Category: Article
ISSN: 0038-1101
DOI: 10.1016/j.sse.2006.09.005

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