✦ LIBER ✦
Gate-voltage dependence of source and drain series resistances and effective gate length in GaAs MESFETs : Y H BYUN, M S SHUR (Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA), A PECALSKI, F L SCHUERMEYER IEEE Trans. Electron. Devices (USA), vol. 35, no. 8, pp. 1241–1246 (Aug. 1988)
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 104 KB
- Volume
- 20
- Category
- Article
- ISSN
- 0026-2692
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