Influence of drain bias voltage on determining the effective channel length and series resistance of drain-engineered MOSFETs below saturation

✍ Scribed by S.L. Chen; Jeng Gong

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 441 KB
• Volume: 35
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/0038-1101(92)90031-7