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Exciton binding energy in a double quantum well: effect of the barrier shift

✍ Scribed by K. Ryczko; G. Sek; J. Misiewicz

Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
218 KB
Volume
32
Category
Article
ISSN
0749-6036

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✦ Synopsis

We have calculated the exciton binding energy in an Al x Ga 1-x As/GaAs double quantum well by a variational envelope function procedure using a simple two-band model. The influence of the shift of the AlAs separating barrier, introducing an asymmetry into the system, on the value of the exciton binding energy has been analysed. It has been observed that this shift induces significant changes of the exciton binding energy-even several meVs in the case of very thin barriers.

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