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Binding Energy of Negatively Charged Exciton in a Semiconductor Quantum Well: The Role of Interface Defects

✍ Scribed by Dacal, L.C.O. ;Ferreira, R. ;Bastard, G. ;Brum, J.A.

Publisher: John Wiley and Sons
Year: 2002
Tongue: English
Weight: 73 KB
Volume: 190
Category: Article
ISSN: 0031-8965
DOI: 10.1002/1521-396x(200204)190:3<799::aid-pssa799>3.0.co;2-8

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✦ Synopsis

a, b), R. Ferreira (a), G. Bastard (a), and J. A. Brum (b, c)

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