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Screening effect on the binding energies of shallow donors, acceptors and excitons in finite-barrier quantum wells

✍ Scribed by H. Akbaş; Ş. Aktaş; S.E. Okan; M. Ulaş; M. Tomak


Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
78 KB
Volume
23
Category
Article
ISSN
0749-6036

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✦ Synopsis


The conduction and valence subband energies in the presence of an electric field are calculated using the fifth-order Runge-Kutta method. The binding energies of shallow donors, acceptors and excitons in finite-barrier GaAs/Ga 1-x Al x As quantum wells are then obtained variationally in the presence of a magnetic field. The effects of a spatially dependent screening function ε(r ) on the calculation of binding energies are specifically investigated. The use of ε(r ) in comparison with the use of a constant ε 0 increases the binding energy of acceptors as the increase on shallow donors and excitons is quite small.


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