Polarizabilities of shallow donors and acceptors in infinite-barrier GaAs/Ga \V Al V As quantum wells have been calculated using the Hasse variational method within the effective mass approximation. The effect of spatially dependent screening on polarizabilities is taken into account with an r-depen
Screening effect on the binding energies of shallow donors, acceptors and excitons in finite-barrier quantum wells
✍ Scribed by H. Akbaş; Ş. Aktaş; S.E. Okan; M. Ulaş; M. Tomak
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 78 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
The conduction and valence subband energies in the presence of an electric field are calculated using the fifth-order Runge-Kutta method. The binding energies of shallow donors, acceptors and excitons in finite-barrier GaAs/Ga 1-x Al x As quantum wells are then obtained variationally in the presence of a magnetic field. The effects of a spatially dependent screening function ε(r ) on the calculation of binding energies are specifically investigated. The use of ε(r ) in comparison with the use of a constant ε 0 increases the binding energy of acceptors as the increase on shallow donors and excitons is quite small.
📜 SIMILAR VOLUMES
We have calculated the exciton binding energy in an Al x Ga 1-x As/GaAs double quantum well by a variational envelope function procedure using a simple two-band model. The influence of the shift of the AlAs separating barrier, introducing an asymmetry into the system, on the value of the exciton bin
We report a calculation of the absorption coefficient of donor impurities located at the center of a quasi-1D GaAs quantum well wire with finite confinement potential as a function of photon energies for different wire widths. The theory has been formulated by using suitable variational wave functio