The conduction and valence subband energies in the presence of an electric field are calculated using the fifth-order Runge-Kutta method. The binding energies of shallow donors, acceptors and excitons in finite-barrier GaAs/Ga 1-x Al x As quantum wells are then obtained variationally in the presence
Screening effect on polarizabilities of shallow donors and acceptors in infinite-barrier quantum wells
β Scribed by K.F. Ilaiwi
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 254 KB
- Volume
- 20
- Category
- Article
- ISSN
- 0749-6036
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β¦ Synopsis
Polarizabilities of shallow donors and acceptors in infinite-barrier GaAs/Ga \V Al V As quantum wells have been calculated using the Hasse variational method within the effective mass approximation. The effect of spatially dependent screening on polarizabilities is taken into account with an r-dependent dielectric response. The effects of electric and magnetic fields are also presented.
π SIMILAR VOLUMES
We report a calculation of the absorption coefficient of donor impurities located at the center of a quasi-1D GaAs quantum well wire with finite confinement potential as a function of photon energies for different wire widths. The theory has been formulated by using suitable variational wave functio