Magnetic field and finite barrier-height effects on the polarizability of a shallow donor in a GaAs quantum wire
β Scribed by A. Zounoubi; K.El messaoudi; I. Zorkani; A. Jorio
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 217 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0749-6036
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π SIMILAR VOLUMES
We report a calculation of the absorption coefficient of donor impurities located at the center of a quasi-1D GaAs quantum well wire with finite confinement potential as a function of photon energies for different wire widths. The theory has been formulated by using suitable variational wave functio
The conduction and valence subband energies in the presence of an electric field are calculated using the fifth-order Runge-Kutta method. The binding energies of shallow donors, acceptors and excitons in finite-barrier GaAs/Ga 1-x Al x As quantum wells are then obtained variationally in the presence