Using a variational procedure within the effective-mass approximation we have calculated the binding energies of shallow-donor impurities in cylindrical GaAs quantum-well wires, in an axial magnetic field and an infinite confinement potential. In contrast to the previous results in quantum wells, we
Doping and magnetic field effects on the dielectric constant of shallow donors in quantum wells
β Scribed by A.Ferreira da Silva; I.C. da Cunha Lima; P.D. Emmel
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 103 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0749-6036
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Polarizabilities of shallow donors and acceptors in infinite-barrier GaAs/Ga \V Al V As quantum wells have been calculated using the Hasse variational method within the effective mass approximation. The effect of spatially dependent screening on polarizabilities is taken into account with an r-depen
The conduction and valence subband energies in the presence of an electric field are calculated using the fifth-order Runge-Kutta method. The binding energies of shallow donors, acceptors and excitons in finite-barrier GaAs/Ga 1-x Al x As quantum wells are then obtained variationally in the presence