The conduction and valence subband energies in the presence of an electric field are calculated using the fifth-order Runge-Kutta method. The binding energies of shallow donors, acceptors and excitons in finite-barrier GaAs/Ga 1-x Al x As quantum wells are then obtained variationally in the presence
Investigation of the effect of quantum well width on the binding energy of excitons to neutral donors
✍ Scribed by P. Harrison; S.J. Weston; T. Piorek; T. Stirner; W.E. Hagston; J.E. Nicholls; M. O'Neill
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 166 KB
- Volume
- 14
- Category
- Article
- ISSN
- 0749-6036
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📜 SIMILAR VOLUMES
We have calculated the exciton binding energy in an Al x Ga 1-x As/GaAs double quantum well by a variational envelope function procedure using a simple two-band model. The influence of the shift of the AlAs separating barrier, introducing an asymmetry into the system, on the value of the exciton bin
The binding energy of the single and double bound polaron bound to a helium-type donor impurity in quantum wells (QWs) subject to a perpendicular electric field are calculated by a variational method. The couplings of an electron and the impurity with various phonon modes are considered. The results