𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Electric-field and screening dependence of exciton binding energy in asymmetric double quantum well

✍ Scribed by Boena Olejnı́ková

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
208 KB
Volume
14
Category
Article
ISSN
0749-6036

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Binding energies of excitons in symmetri
Binding energies of excitons in symmetric and asymmetric quantum wells in a magnetic field
✍ E. Kasapoglu; H. Sari; Y. Ergun; S. Elagoz; I. Sokmen 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 137 KB

The binding energy of the exciton in the symmetric and asymmetric GaAs/Ga 1-x Al x As quantum wells is calculated with the use of a variational approach. Results have been obtained as a function of the potential symmetry, and the size of the quantum well in the presence of an arbitrary magnetic fiel

Exciton binding energy in a double quant
Exciton binding energy in a double quantum well: effect of the barrier shift
✍ K. Ryczko; G. Sek; J. Misiewicz 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 218 KB

We have calculated the exciton binding energy in an Al x Ga 1-x As/GaAs double quantum well by a variational envelope function procedure using a simple two-band model. The influence of the shift of the AlAs separating barrier, introducing an asymmetry into the system, on the value of the exciton bin

Polaron effects on the binding energy of
Polaron effects on the binding energy of a double donor impurity in quantum wells in an electric field
✍ Zi-xin Liu; Xing-yi Li; Xing-li Chu; Yong-chang Huang; Ya Liu 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 151 KB

The binding energy of the single and double bound polaron bound to a helium-type donor impurity in quantum wells (QWs) subject to a perpendicular electric field are calculated by a variational method. The couplings of an electron and the impurity with various phonon modes are considered. The results

Screening effect on the binding energies
Screening effect on the binding energies of shallow donors, acceptors and excitons in finite-barrier quantum wells
✍ H. Akbaş; Ş. Aktaş; S.E. Okan; M. Ulaş; M. Tomak 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 78 KB

The conduction and valence subband energies in the presence of an electric field are calculated using the fifth-order Runge-Kutta method. The binding energies of shallow donors, acceptors and excitons in finite-barrier GaAs/Ga 1-x Al x As quantum wells are then obtained variationally in the presence

Magnetic field dependence of the binding
Magnetic field dependence of the binding energy of shallow donors in GaAs quantum-well wires
✍ Ecaterina Niculescu; Alina Gearba; Gabriela Cone; C. Negutu 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 231 KB

Using a variational procedure within the effective-mass approximation we have calculated the binding energies of shallow-donor impurities in cylindrical GaAs quantum-well wires, in an axial magnetic field and an infinite confinement potential. In contrast to the previous results in quantum wells, we

Subband and excitonic binding of graded
Subband and excitonic binding of graded GaAs/Ga1–xAlxAs quantum wells under an electric field
✍ H. Sari; Y. Ergün; S. Elagöz; E. Kasapo ǧ; İ Sökmen; M. Tomak 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 124 KB

The effects of an applied electric field on subband energies and excitonic binding for a graded GaAlAs quantum well are calculated variationally within the effective mass approximation. The very sensitive dependence of subband energies on the applied field is calculated using a model potential profi