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Subband and excitonic binding of graded GaAs/Ga1–xAlxAs quantum wells under an electric field

✍ Scribed by H. Sari; Y. Ergün; S. Elagöz; E. Kasapo ǧ; İ Sökmen; M. Tomak

Publisher: Elsevier Science
Year: 1998
Tongue: English
Weight: 124 KB
Volume: 23
Category: Article
ISSN: 0749-6036
DOI: 10.1006/spmi.1996.0149

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✦ Synopsis

The effects of an applied electric field on subband energies and excitonic binding for a graded GaAlAs quantum well are calculated variationally within the effective mass approximation. The very sensitive dependence of subband energies on the applied field is calculated using a model potential profile and exact electron and hole wavefunctions. Our calculations have revealed the dependence of the energy shifts of subbands, and excitonic binding on the field direction in the graded quantum well. This permits control over tunnelling which could be desirable for some applications.

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