Binding energies of excitons in symmetric and asymmetric quantum wells in a magnetic field
β Scribed by E. Kasapoglu; H. Sari; Y. Ergun; S. Elagoz; I. Sokmen
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 137 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0749-6036
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β¦ Synopsis
The binding energy of the exciton in the symmetric and asymmetric GaAs/Ga 1-x Al x As quantum wells is calculated with the use of a variational approach. Results have been obtained as a function of the potential symmetry, and the size of the quantum well in the presence of an arbitrary magnetic field. The applied magnetic field is taken to be parallel to the axis of growth of the quantum well structure. The role of the asymmetric barriers, magnetic field, and well width in the excitonic binding is discussed as the tunability parameters of the GaAs/Ga 1-x Al x As system.
π SIMILAR VOLUMES
An analytical approach to the problem of an exciton with extremely different electron and hole masses in a quantum well (QW) subject to a strong magnetic field is developed. The double adiabatic approximation is used. The dependence of the exciton energy levels upon the magnitude of the magnetic fie
We have calculated the exciton binding energy in an Al x Ga 1-x As/GaAs double quantum well by a variational envelope function procedure using a simple two-band model. The influence of the shift of the AlAs separating barrier, introducing an asymmetry into the system, on the value of the exciton bin