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Evolution of interstitial- and vacancy-type defects upon thermal annealing in ion-implanted Si

✍ Scribed by Libertino, S.; Benton, J. L.; Jacobson, D. C.; Eaglesham, D. J.; Poate, J. M.; Coffa, S.; KringhoÌ¸j, P.; Fuochi, P. G.; Lavalle, M.

Book ID: 121435655
Publisher: American Institute of Physics
Year: 1997
Tongue: English
Weight: 262 KB
Volume: 71
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.119546

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