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Observation of Thermal-Annealing Evolution of Defects in Ion-Implanted 4H-SiC by Luminsescence

✍ Scribed by Freitas, Jaime A.; Jones, Kenneth A.; Derenge, Michael A.; Vispute, R.D.; Hullavarad, Shiva S.


Book ID
120484992
Publisher
Trans Tech Publications, Ltd.
Year
2006
Tongue
English
Weight
409 KB
Volume
527-529
Category
Article
ISSN
1662-9752

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A physically motivated model that accounts for the spatial and temporal evolution of extended defect distribution in ion-implanted Si is presented. Free physical parameters are extracted from experimental data and by means of a genetic algorithm (GA). Transmission electron microscopy (TEM) data and