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Evolution of D1-Defect Center in 4H-SiC during High Temperature Annealing

✍ Scribed by Maximenko, Serguei I.; Freitas, Jamie A.; Garces, N.Y.; Glaser, E.R.; Fanton, Mark A.

Book ID: 120485614
Publisher: Trans Tech Publications, Ltd.
Year: 2008
Tongue: English
Weight: 472 KB
Volume: 600-603
Category: Article
ISSN: 1662-9752
DOI: 10.4028/www.scientific.net/MSF.600-603.429

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