Evolution of Deep Defect Centers in Semi-Insulating 4H-SiC Substrates under High-Temperature Annealing

✍ Scribed by S.I. Maximenko; J.A. Freitas; N.Y. Garces; E.R. Glaser; M.A. Fanton

• Book ID: 107455329
• Publisher: Springer US
• Year: 2008
• Tongue: English
• Weight: 256 KB
• Volume: 38
• Category: Article
• ISSN: 0361-5235
• DOI: 10.1007/s11664-008-0607-0