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Behaviour of defects in semi-insulating 4H-SiC after ultra-high temperature anneal treatments

✍ Scribed by N.Y. Garces; E.R. Glaser; W.E. Carlos; M.A. Fanton


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
260 KB
Volume
401-402
Category
Article
ISSN
0921-4526

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