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Positron annihilation study of 4H-SiC by Ge+ implantation and subsequent thermal annealing

✍ Scribed by R.S. Yu; M. Maekawa; A. Kawasuso; B.Y. Wang; L. Wei

Book ID
113823707
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
314 KB
Volume
270
Category
Article
ISSN
0168-583X

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