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Study of Imperfections in Ge–Te Semiconductors by the Positron Annihilation Technique

✍ Scribed by Kobrin, B. V. ;Kupriyanova, R. M. ;Minaev, V. S. ;Prokopiev, E. P. ;Shantarovich, V. P.


Publisher
John Wiley and Sons
Year
1982
Tongue
English
Weight
276 KB
Volume
73
Category
Article
ISSN
0031-8965

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Study of aggregation behaviour in HDEHP—
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The aggregation behaviour of di(2-ethyl hexyl) phosphoric acid (HDEHP) in n-heptane was studied by the positron annihilation technique. The discontinuity in the positronium formation intensity, 12, as a function of HDEHP concentration suggested formation of close aggregates of HDEHP molecules.