𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Evolution and recrystallization of buried amorphous layers in Al22+ implanted 4H-SiC

✍ Scribed by Yanwen Zhang; William J Weber; Weilin Jiang; Anders Hallén; Göran Possnert

Book ID
114166082
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
433 KB
Volume
195
Category
Article
ISSN
0168-583X

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Full wafer size investigation of N+and P
Full wafer size investigation of N+and P+co-implanted layers in 4H-SiC
✍ Blanqué, S. ;Lyonnet, J. ;Pérez, R. ;Terziyska, P. ;Contreras, S. ;Godignon, P. 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 371 KB

## Abstract We report a full wafer size investigation of the homogeneity of electrical properties in the case of co‐implanted nitrogen and phosphorus ions in 4H–SiC semi‐insulating wafers. To match standard industrial requirements, implantation was done at room temperature. To achieve a detailed el