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Full wafer size investigation of N+and P+co-implanted layers in 4H-SiC

✍ Scribed by Blanqué, S. ;Lyonnet, J. ;Pérez, R. ;Terziyska, P. ;Contreras, S. ;Godignon, P. ;Mestres, N. ;Pascual, J. ;Camassel, J.

Book ID
105363078
Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
371 KB
Volume
202
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

We report a full wafer size investigation of the homogeneity of electrical properties in the case of co‐implanted nitrogen and phosphorus ions in 4H–SiC semi‐insulating wafers. To match standard industrial requirements, implantation was done at room temperature. To achieve a detailed electrical knowledge, we worked on a 35 mm wafer on which 77 different reticules have been processed. Every reticule includes one Hall cross, one Van der Pauw test structure and different TLM patterns. Hall measurements have been made on all 77 different reticules, using an Accent HL5500 Hall System^®^ from BioRad fitted with an home‐made support to collect data from room temperature down to about 150 K. At room temperature, we find that the sheet carrier concentration is only 1/4 of the total implanted dose while the average mobility is 80.6 cm^2^/Vs. The standard deviation is, typically, 1.5 cm^2^/Vs. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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