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Characterization of inversion and accumulation layer electron transport in 4H and 6H-SiC MOSFETs on implanted P-type regions

✍ Scribed by Vathulya, V.R.; White, M.H.

Book ID: 114538309
Publisher: IEEE
Year: 2000
Tongue: English
Weight: 150 KB
Volume: 47
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.877161

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