Effect of processing conditions on inversion layer mobility and interface state density in 4H−SiC MOSFETs

✍ Scribed by S. Banerjee; K. Chatty; T. P. Chow; R. J. Gutmann

• Book ID: 107452602
• Publisher: Springer US
• Year: 2001
• Tongue: English
• Weight: 324 KB
• Volume: 30
• Category: Article
• ISSN: 0361-5235
• DOI: 10.1007/s11664-001-0025-z