✦ LIBER ✦
The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H–SiC MOS devices
✍ Scribed by Xingguang Zhu; Ayayi C. Ahyi; Mingyu Li; Zengjun Chen; John Rozen; Leonard C. Feldman; John R. Williams
- Book ID
- 108271842
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 649 KB
- Volume
- 57
- Category
- Article
- ISSN
- 0038-1101
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