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Electrical and structural properties of polycrystalline 3C-SiC layer regrown from amorphized 4H-SiC(0 0 0 1) by P and Al ion implantations

✍ Scribed by Tomoaki Nishimura; Masataka Satoh; Takeshi Jinushi; Yukio Saitou; Tohru Nakamura

No coin nor oath required. For personal study only.

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Electrical and structural properties of polycrystalline 3C-SiC layer regrown from amorphized 4H-SiC(0&#xa0;0&#xa0;0&#xa0;1) by P and Al ion implantations