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GaN nucleation on 6H-SiC(0 0 0 1)-(√3 × √3)R30°:Ga and c-sapphire via ion-induced nitridation of gallium: Wetting layers

✍ Scribed by A. Sidorenko; H. Peisert; H. Neumann; T. Chassé

No coin nor oath required. For personal study only.

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GaN nucleation on 6H-SiC(0&#xa0;0&#xa0;0&#xa0;1)-(√3&#xa0;×&#xa0;√3)R30°:Ga and c-sapphire via ion-induced nitridation of gallium: Wetting layers