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Electrical properties of the regrown implantation-induced amorphous layer on (1 1̄ 0 0)- and (1 1 2̄ 0)-oriented 6H-SiC

✍ Scribed by Tomonori Nakamura; Hitoshi Tanabe; Takeshi Hitomi; Masataka Satoh

No coin nor oath required. For personal study only.

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Electrical properties of the regrown implantation-induced amorphous layer on (1&#xa0;1̄&#xa0;0&#xa0;0)- and (1&#xa0;1&#xa0;2̄&#xa0;0)-oriented 6H-SiC