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Relaxation of a strained 3C-SiC(1 1 1) thin film on silicon by He+ and O+ ion beam defect engineering

✍ Scribed by M. Häberlen; B. Murphy; B. Stritzker; J.K.N. Lindner

No coin nor oath required. For personal study only.

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Relaxation of a strained 3C-SiC(1&#xa0;1&#xa0;1) thin film on silicon by He+ and O+ ion beam defect engineering