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SiC nanoboulders on silicon – a nuclear reaction analysis study of low energy 13C implanted and subsequently electron beam annealed (1 0 0) silicon

✍ Scribed by A. Markwitz; V.J. Kennedy; S. Johnson; W.J. Trompetter; M. Rudolphi; H. Baumann


Book ID
113822808
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
334 KB
Volume
217
Category
Article
ISSN
0168-583X

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A nuclear reaction analysis and optical
✍ A. Markwitz; F. Lucas; J. Rusterucci; J. Kennedy; W.J. Trompetter; M. Rudolphi; 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 263 KB

Ion implantation of 20 keV 12 C + ions into (1 0 0), p-type silicon with ion fluence of 8 • 10 16 at. cm À2 followed by an electron beam annealing under high vacuum conditions has been performed to investigate the formation of crystalline nano-scale SiC features on the silicon surface. Depending on