Precipitates and defects in silicon co-i
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B.S. Li; C.H. Zhang; H.H. Zhang; Y. Zhang; Y.T. Yang; L.Q. Zhang
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Article
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2011
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Elsevier Science
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English
β 931 KB
Nano-bubbles or voids introduced by He implantation before the oxygen implantation collect oxygen and increase the oxygen content in the sample. Furthermore, nano-bubbles or voids can trap Si interstitials to decrease the dislocations at the edge of precipitates. The density and shape of precipitate