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Evidence of extended defects and precipitates in TiO2 implanted with potassium

✍ Scribed by M Guermazi; P Thevenard; M Treilleux; C.H.S Dupuy


Book ID
113185903
Publisher
Elsevier Science
Year
1980
Tongue
English
Weight
478 KB
Volume
15
Category
Article
ISSN
0025-5408

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Precipitates and defects in silicon co-i
✍ B.S. Li; C.H. Zhang; H.H. Zhang; Y. Zhang; Y.T. Yang; L.Q. Zhang πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 931 KB

Nano-bubbles or voids introduced by He implantation before the oxygen implantation collect oxygen and increase the oxygen content in the sample. Furthermore, nano-bubbles or voids can trap Si interstitials to decrease the dislocations at the edge of precipitates. The density and shape of precipitate