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Extended defects in Si wafers implanted with ions of rare-earth elements

✍ Scribed by V.I. Vdovin; T.G. Yugova; N.A. Sobolev; E.I. Shek; M.I. Makovijchuk; E.O. Parshin

Book ID
114170538
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
197 KB
Volume
147
Category
Article
ISSN
0168-583X

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## Abstract The medium range implantation of rare earth ions at room temperature in GaN layers leads to the formation of point defect clusters, basal and prismatic stacking faults from the lowest fluence. When a threshold fluence of about 3 Γ— 10^15^ at/cm^2^ is reached, a highly disordered β€˜nanocry