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Optical and electrical activity of defects in rare earth implanted Si

✍ Scribed by J.H. Evans-Freeman; K.D. Vernon-Parry


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
186 KB
Volume
28
Category
Article
ISSN
0925-3467

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Structure and electrical activity of rar
✍ R. Jones πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 148 KB

We review theoretical investigations into the structure and electrical activity of rare-earth dopants in group IV and III-V semiconductors. We find that in Si, rare-earth dopants are electrically active and have a high affinity for complexing with oxygen. In contrast, rare-earth dopants in GaAs and