Structure and electrical activity of rar
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R. Jones
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Article
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2006
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Elsevier Science
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English
β 148 KB
We review theoretical investigations into the structure and electrical activity of rare-earth dopants in group IV and III-V semiconductors. We find that in Si, rare-earth dopants are electrically active and have a high affinity for complexing with oxygen. In contrast, rare-earth dopants in GaAs and