Simultaneous elimination of electrically active defects in Si/SiO2 structures by implanted fluorine
β Scribed by V.V. Afanas'ev; M. Depas; J.M.M. de Nijs; P. Balk
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 392 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0167-9317
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π SIMILAR VOLUMES
The effect of 12 MeV electron irradiation of p-type Si-SiO 2 structures is studied by Deep Level Transient Spectroscopy (DLTS) measurements. The DLTS spectra of non-irradiated samples exhibit one peak only corresponding to a deep level located in the forbidden gap at 0.56 eV above the valence band e
Defects induced by high-energy electrons in Si-SiO 2 structure have been studied by the optically stimulated electron emission (OSEE) method. Si-SiO 2 structures with oxide thickness of 100 nm are irradiated with 23 MeV electrons for different durations. It is shown that most of the defects created