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Interface defects introduced in Si/SiO2 structures by hydrogen implantation

✍ Scribed by S. Alexandrova; A. Szekeres; I. Nedev


Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
342 KB
Volume
150
Category
Article
ISSN
0040-6090

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A procedure for the determination of the interface layer thickness between the bulk Ðlm and the Si substrate SiO 2 from single-wavelength null ellipsometric data is described. The e †ect of the angular errors in the angle of incidence is eliminated because it is found along with the Ðlm and interfac