✦ LIBER ✦

Electrical characterization of defects induced by 12 MeV electrons in p—type Si-SiO2 structures

✍ Scribed by KG Stefanov; S Kaschieva; D Karpuzov

Publisher: Elsevier Science
Year: 1998
Tongue: English
Weight: 213 KB
Volume: 51
Category: Article
ISSN: 0042-207X
DOI: 10.1016/s0042-207x(98)00166-3

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✦ Synopsis

The effect of 12 MeV electron irradiation of p-type Si-SiO 2 structures is studied by Deep Level Transient Spectroscopy (DLTS) measurements. The DLTS spectra of non-irradiated samples exhibit one peak only corresponding to a deep level located in the forbidden gap at 0.56 eV above the valence band edge of the Si matrix. Four additional, shallower levels are found in the spectra after bombardment with high-energy electrons, whereas the peak intensity is dependent on the irradiation dose. The corresponding activation energy of the created defects, as well as the density of the traps and the electron-capture cross sections are evaluated.

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