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Estimation of the impurity redistribution in silicon substrates from MOSFET characteristics

โœ Scribed by Wada, A.

Book ID
114590479
Publisher
IEEE
Year
1973
Tongue
English
Weight
256 KB
Volume
20
Category
Article
ISSN
0018-9383

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Substrate current characteristics in partially depleted silicon-on-insulator n-MOSFETs from room temperature down to 4.2 K
โœ E. Simoen; C. Claeys ๐Ÿ“‚ Article ๐Ÿ“… 1995 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 652 KB

This paper reports on the substrate current (1,) characteristics of partially depleted silicon-on-insulator (SOI) n-MOSFETs at 4.2, 77 and 300 K. It is demonstrated that, to a good approximation, the same model as for bulk MOSFETs can be used to describe the gate and drain voltage dependence of le i