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Electron-electron interaction signature peak in the substrate current versus gate voltage characteristics of n-channel silicon MOSFETs

✍ Scribed by Anil, K.G.; Mahapatra, S.; Eisele, I.


Book ID
114616781
Publisher
IEEE
Year
2002
Tongue
English
Weight
306 KB
Volume
49
Category
Article
ISSN
0018-9383

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