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On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration

โœ Scribed by Takagi, S.; Toriumi, A.; Iwase, M.; Tango, H.


Book ID
114535952
Publisher
IEEE
Year
1994
Tongue
English
Weight
624 KB
Volume
41
Category
Article
ISSN
0018-9383

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