✦ LIBER ✦
Substrate current characteristics in partially depleted silicon-on-insulator n-MOSFETs from room temperature down to 4.2 K
✍ Scribed by E. Simoen; C. Claeys
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 652 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0011-2275
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✦ Synopsis
This paper reports on the substrate current (1,) characteristics of partially depleted silicon-on-insulator (SOI) n-MOSFETs at 4.2, 77 and 300 K. It is demonstrated that, to a good approximation, the same model as for bulk MOSFETs can be used to describe the gate and drain voltage dependence of le in SOI MOSFETs. The temperature dependence of the semi-empirical coefficients is discussed and the impact of the so-called twin-gate concept on jr., is investigated.