EPR and electrical studies of native point defects in ZnSiP2 semiconductors

✍ Scribed by W Gehlhoff; D Azamat; A Krtschil; A Hoffmann; A Krost

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 385 KB
• Volume: 340-342
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2003.09.201

✦ Synopsis

We present the first detection of native defects in ZnSiP 2 . Similar to p-type ZnGeP 2 , the EPR spectra of the zinc vacancy V À Zn ; the phosphorus vacancy V 0 P ; as well as of group IV anti-site Si þ Zn ðGe þ Zn Þ could be proved. The influence of the group IV-ions on the bonding behavior for the different lattice sites is reflected in the differences of the EPR parameters in both lattices. In both materials, V 0 P could be observed only by photo-excitation, whereas the silicon antisite Si þ

Zn was detectable also in the dark contrary to Ge þ Zn : This is connected with the shift of the Fermi level in the n-type ZnSiP 2 samples. In disagreement with the recharching model developed for the dominant native defects in ZnGeP 2 we could detect both Si þ Zn and V À Zn in the dark. This contradiction could be resolved by scanning surface potential microscopy measurements, which have shown that the Fermi level position laterally varies in these samples, realizing the paramagnetic states of both defects in different regions of the sample.