✦ LIBER ✦

Native Point Defects and Nonstoichiometry in GaAs (I). Homogeneity Region of Gallium Arsenide

✍ Scribed by A. N. Morozov; V. T. Bublik; O. Yu. Morozova

Publisher: John Wiley and Sons
Year: 1986
Tongue: English
Weight: 405 KB
Volume: 21
Category: Article
ISSN: 0232-1300
DOI: 10.1002/crat.2170210612

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Native Point Defects and Nonstoichiometr

Native Point Defects and Nonstoichiometry in GaAs (II) Mechanism of Formation and Degradation of Semiinsulating Properties of Undoped Gallium Arsenide Crystals

✍ A. N. Morozov; V. T. Bublik; O. Yu. Morozova 📂 Article 📅 1986 🏛 John Wiley and Sons 🌐 English ⚖ 424 KB

The nature of the main electron trap, EL2, in undoped scniiinsulating GaAs crystals have been studied both qualitatively and quantitatively. It has been shown that point tlefects which, most probably, are responsible for the EL2 level are antisite Aso, defwts or ( A s ~-V G ~) coiiiplexes which are

Thermochemical analysis of native point

Thermochemical analysis of native point defects and substitutional carbon and boron in GaAs crystal growth

✍ H. Wenzl; K. Mika; D. Henkel 📂 Article 📅 1990 🏛 John Wiley and Sons 🌐 English ⚖ 1018 KB

The phase extent of GaAs has been analyzed and compared with published phase diagrams as related to total and partial point defect equilibria including charged and uncharged Frenkel, Schottky, antisite defects and substitutional carbon and boron on both sublattices. The well-known transition betwee